The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2023

Filed:

Feb. 02, 2021
Applicant:

Seoul Viosys Co., Ltd., Gyeonggi-do, KR;

Inventors:

Yong Hyun Baek, Gyeonggi-do, KR;

Ji Hun Kang, Gyeonggi-do, KR;

Chae Hon Kim, Gyeonggi-do, KR;

Ji Hoon Park, Gyeonggi-do, KR;

Assignee:

Seoul Viosys Co., Ltd., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/24 (2010.01); H01L 33/32 (2010.01); H01L 33/06 (2010.01);
U.S. Cl.
CPC ...
H01L 33/24 (2013.01); H01L 33/06 (2013.01); H01L 33/32 (2013.01);
Abstract

A light emitting diode includes an n-type nitride semiconductor layer, a V-pit generation layer located over the n-type nitride semiconductor layer and having a V-pit, an active layer located on the V-pit generation layer, and a p-type nitride semiconductor layer located on the active layer. The active layer includes a well layer, which includes a first well layer portion formed along a flat surface of the V-pit generation layer and a second well layer portion formed in the V-pit of the V-pit generation layer. The light emitting diode emits light having at least two peak wavelengths at a single chip level.


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