The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2023
Filed:
Jul. 27, 2018
Nissan Motor Co., Ltd., Yokohama, JP;
Renault S.a.s., Boulogne-Billancourt, FR;
Toshiharu Marui, Kanagawa, JP;
Tetsuya Hayashi, Kanagawa, JP;
Keiichiro Numakura, Kanagawa, JP;
Wei Ni, Kanagawa, JP;
Ryota Tanaka, Kanagawa, JP;
Keisuke Takemoto, Kanagawa, JP;
NISSAN MOTOR CO., LTD., Yokohama, JP;
RENAULT s.a.s., Boulogne-Billancourt, FR;
Abstract
A semiconductor device includes: a substrate (); a semiconductor layer () disposed on a main surface of this substrate (); and a first main electrode () and a second main electrode (), which are disposed on the substrate () separately from each other with the semiconductor layer () sandwiched therebetween and are individually end portions of a current path of a main current flowing in an on-state. The semiconductor layer () includes: a first conductivity-type drift region () through which a main current flows; a second conductivity-type column region () that is disposed inside the drift region () and extends in parallel to a current path; and an electric field relaxation region () that is disposed in at least a part between the drift region () and the column region () and is either a low-concentration region in which an impurity concentration is lower than in the same conductivity-type adjacent region or a non-doped region.