The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2023

Filed:

Dec. 29, 2020
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Christopher Boguslaw Kocon, Mountain Top, PA (US);

Henry Litzmann Edwards, Garland, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 29/0673 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/407 (2013.01); H01L 29/41775 (2013.01); H01L 29/45 (2013.01); H01L 29/66696 (2013.01);
Abstract

A semiconductor device includes a switch element having a surface and first and second regions and including a first semiconductor material having a band-gap. The first region of the switch element is coupled to a source contact. A floating electrode has first and second ends. The first end of the floating electrode is coupled to the second region of the switch element. A voltage-support structure includes a second semiconductor material having a band-gap that is larger than the band-gap of the first semiconductor material. The voltage-support structure is in contact with the second end of the floating electrode. A drain contact is coupled to the voltage-support structure.


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