The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2023

Filed:

Sep. 18, 2020
Applicant:

Samsung Electronics Co., Ltd., Seoul, KR;

Inventors:

Jonghan Lee, Namyangju-si, KR;

Wandon Kim, Seongnam-si, KR;

Jaeyeol Song, Seoul, KR;

Jeonghyuk Yim, Seoul, KR;

HyungSuk Jung, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 27/088 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 21/8234 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42364 (2013.01); H01L 21/28247 (2013.01); H01L 21/76834 (2013.01); H01L 21/76897 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 27/088 (2013.01); H01L 29/518 (2013.01); H01L 29/66545 (2013.01);
Abstract

Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device comprises a gate electrode on a substrate, an upper capping pattern on the gate electrode, and a lower capping pattern between the gate electrode and the upper capping pattern. The lower capping pattern comprises a first portion between the gate electrode and the upper capping pattern, and a plurality of second portions extending from the first portion onto corresponding side surfaces of the upper capping pattern. The upper capping pattern covers a topmost surface of each of the second portions.


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