The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2023

Filed:

Apr. 19, 2018
Applicant:

Nissan Motor Co., Ltd., Yokohama, JP;

Inventors:

Toshiharu Marui, Kanagawa, JP;

Tetsuya Hayashi, Kanagawa, JP;

Keiichiro Numakura, Kanagawa, JP;

Wei Ni, Kanagawa, JP;

Ryota Tanaka, Kanagawa, JP;

Keisuke Takemoto, Kanagawa, JP;

Assignee:

NISSAN MOTOR CO., LTD., Yokohama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0634 (2013.01); H01L 29/1058 (2013.01); H01L 29/1095 (2013.01); H01L 29/45 (2013.01);
Abstract

A semiconductor device includes: a drift region of a first conductive type including a contact section and extension sections extending along the main surface of a substrate; column regions of a second conductive type which alternate with the extension sections in a perpendicular direction to the extension direction of the extension sections and each includes an end connecting to the contact section; a well region of a second conductive type which connects to the other end of each column region and tips of the extension sections; and electric field relaxing electrodes which are provided above at least some of residual pn junctions with an insulating film interposed therebetween. Herein, the residual pn junctions are pn junctions other than voltage holding pn junctions formed in interfaces between the extension sections and the column regions.


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