The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2023

Filed:

Aug. 26, 2020
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Jae Uoon Kim, Hwaseong-si, KR;

Hong Sick Park, Suwon-si, KR;

Jong Hyun Choung, Suwon-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 27/32 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1259 (2013.01); H01L 27/124 (2013.01); H01L 27/3248 (2013.01); H01L 27/3276 (2013.01); H01L 21/47635 (2013.01); H01L 27/1225 (2013.01); H01L 27/322 (2013.01);
Abstract

A method of fabricating a conductive pattern includes forming a conductive metal material layer and a conductive capping material layer on a substrate, forming a photoresist pattern as an etching mask on the conductive capping material layer, forming a first conductive capping pattern by etching the conductive capping material layer with a first etchant, forming a conductive metal layer and a second conductive capping pattern by etching the conductive metal material layer and the first conductive capping pattern with a second etchant, and forming a conductive capping layer by etching the second conductive capping pattern with a third etchant. The second conductive capping pattern includes a first region overlapping the conductive metal layer and a second region not overlapping the conductive metal layer, and the forming of the conductive capping layer includes etching the second region of the second conductive capping pattern to form the conductive capping layer.


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