The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2023
Filed:
May. 24, 2021
Applicant:
Sunrise Memory Corporation, Fremont, CA (US);
Inventors:
Assignee:
SUNRISE MEMORY CORPORATION, San Jose, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 27/11568 (2017.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/02532 (2013.01); H01L 21/02573 (2013.01); H01L 21/02598 (2013.01); H01L 21/02636 (2013.01); H01L 21/02661 (2013.01); H01L 27/11568 (2013.01); H01L 29/40117 (2019.08);
Abstract
A thin-film storage transistor includes (a) first and second semiconductor regions comprising polysilicon of a first conductivity; and (b) a channel region between the first and second semiconductor regions, the channel region comprising single-crystal epitaxial grown silicon, and wherein the thin-film storage transistor is formed above a monocrystalline semiconductor substrate.