The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2023
Filed:
Aug. 31, 2020
Kioxia Corporation, Tokyo, JP;
Yasuhiro Uchiyama, Yokkaichi Mie, JP;
KIOXIA CORPORATION, Tokyo, JP;
Abstract
A semiconductor storage device includes: a stacked body having a plurality of insulating layers and a plurality of gate electrode layers alternately stacked in a first direction, the plurality of gate electrode layers including a first gate electrode layer and a second gate electrode layer, the second gate electrode layer adjacent to the first gate electrode layer in the first direction, and the plurality of insulating layers including a first insulating layer located between the first gate electrode layer and the second gate electrode layer; a semiconductor layer extending in the first direction; a first charge storage layer disposed between the semiconductor layer and the first gate electrode layer, the first charge storage layer including silicon and nitrogen; a second charge storage layer disposed between the semiconductor layer and the second gate electrode layer, the second charge storage layer sandwiching the first insulating layer with the first charge storage layer.