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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11557587 B1

PDFFull Text
Date of Patent:
Jan. 17, 2023

Filed:

May. 14, 2020

Semiconductor device and semiconductor package

Applicant:

Rohm Co., Ltd., Kyoto, JP;

Inventors:

Kentaro Nasu, Kyoto, JP;

Kenji Nishida, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:

Hamre, Schumann, Mueller & Larson, P.C.

Primary Examiner:

Sarah K Salerno

Int. Cl.
CPC ...
H01L 27/08 (2006.01); H01L 27/088 (2006.01); H01L 23/522 (2006.01); H01L 27/02 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 27/06 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/49 (2006.01); H01L 23/495 (2006.01); H01L 21/8234 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 23/5226 (2013.01); H01L 27/0207 (2013.01); H01L 27/0255 (2013.01); H01L 27/0629 (2013.01); H01L 29/0696 (2013.01); H01L 29/4236 (2013.01); H01L 29/4238 (2013.01); H01L 29/7802 (2013.01); H01L 29/7813 (2013.01); H01L 29/7817 (2013.01); H01L 29/7827 (2013.01); H01L 21/823475 (2013.01); H01L 21/823487 (2013.01); H01L 23/49562 (2013.01); H01L 29/0619 (2013.01); H01L 29/0869 (2013.01); H01L 29/0878 (2013.01); H01L 29/41741 (2013.01); H01L 29/4933 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/49111 (2013.01);
Abstract

A semiconductor device includes an enhancement-mode first p-channel MISFET, an enhancement-mode second p-channel MISFET, a drain conductor electrically and commonly connected to the first p-channel MISFET and the second p-channel MISFET, a first source conductor electrically connected to a source of the first p-channel MISFET, a second source conductor electrically connected to a source of the second p-channel MISFET, and a gate conductor electrically and commonly connected to a gate of the first p-channel MISFET and a gate of the second p-channel MISFET.

Find Patent Forward Citations

Nasu, Kentaro. (2023). Semiconductor device and semiconductor package (U.S. Patent No. 11557587). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11557587

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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