The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2023

Filed:

Apr. 01, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jeong-Lim Kim, Seoul, KR;

Myung Soo Noh, Suwon-si, KR;

No Young Chung, Hwaseong-si, KR;

Seok Yun Jeong, Osan-si, KR;

Young Han Kim, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/092 (2006.01); G06F 30/392 (2020.01); H01L 27/11 (2006.01); G06F 117/12 (2020.01);
U.S. Cl.
CPC ...
H01L 27/0207 (2013.01); G06F 30/392 (2020.01); H01L 27/0924 (2013.01); H01L 27/1104 (2013.01); G06F 2117/12 (2020.01);
Abstract

A semiconductor device comprising first and second unit cells, the first unit cell comprising a first fin pattern extending in a first direction, a first gate pattern extending in a second direction, and a first contact disposed on a side of the first gate pattern contacting the first fin pattern, the second unit cell comprising a second fin pattern extending in the first direction, a second gate pattern extending in the second direction, and a second contact disposed on a side of the second gate pattern contacting the second fin pattern, wherein the first and second gate patterns are spaced apart and lie on a first straight line extending in the second direction, the first and second contacts are spaced apart and lie on a second straight line extending in the second direction, and a first middle contact is disposed on and connects the first and second contacts.


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