The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2023

Filed:

May. 19, 2022
Applicant:

Monde Wireless Inc., Goleta, CA (US);

Inventors:

Brian Romanczyk, Goleta, CA (US);

Matthew Guidry, Goleta, CA (US);

Assignee:

MONDE WIRELESS INC., Goleta, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 23/528 (2006.01); H01L 29/20 (2006.01); H01L 23/522 (2006.01); H01L 23/36 (2006.01); H01L 25/00 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 23/36 (2013.01); H01L 23/49872 (2013.01); H01L 23/5226 (2013.01); H01L 25/00 (2013.01); H01L 29/2003 (2013.01); H01L 29/778 (2013.01); H01L 29/7781 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01);
Abstract

In order to reduce costs as well as to effectively dissipate heat in certain RF circuits, a semiconductor device of the circuit can include one or more active devices such as transistors, diodes, and/or varactors formed of a first semiconductor material system integrated onto (e.g., bonded to) a base substrate formed of a second semiconductor material system that includes other circuit components. The first semiconductor material system can, for example, be the III-V or III-N semiconductor system, and the second semiconductor material system can, for example be silicon.


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