The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2023

Filed:

Sep. 07, 2021
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Yan-De Lin, New Taipei, TW;

Jui-Hsiu Jao, Taoyuan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G11C 29/50 (2006.01); G11C 29/02 (2006.01); G11C 11/4078 (2006.01);
U.S. Cl.
CPC ...
G11C 29/006 (2013.01); G11C 11/4078 (2013.01); G11C 29/025 (2013.01); G11C 29/50004 (2013.01); G11C 29/787 (2013.01); G11C 2029/5004 (2013.01); G11C 2229/763 (2013.01);
Abstract

The present application provides a memory test circuit and a device wafer including the memory test circuit. The memory test circuit is coupled to a memory array having intersecting first and second signal lines, and includes a fuse element and a transistor. The fuse element has a first terminal coupled to a first group of the first signal lines and a test voltage, and has a second terminal coupled to second and third groups of the first signal lines. The transistor has a source/drain terminal coupled to the second terminal of the fuse element and another source/drain terminal coupled to a reference voltage. The first group of the first signal lines are selectively coupled to the test voltage when the transistor is turned on, and all of the first signal lines are coupled to the test voltage when the transistor is kept off.


Find Patent Forward Citations

Loading…