The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2023

Filed:

Jun. 15, 2021
Applicant:

Imec Vzw, Leuven, BE;

Inventors:

Younghyun Kim, Leuven, BE;

Didit Yudistira, Kessel-Lo, BE;

Bernardette Kunert, Wilsele, BE;

Joris Van Campenhout, Leuven, BE;

Maria Ioanna Pantouvaki, Kessel-Lo, BE;

Assignee:

IMEC VZW, Leuven, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/225 (2006.01); G02F 1/21 (2006.01); H01L 29/66 (2006.01); H01L 29/94 (2006.01);
U.S. Cl.
CPC ...
G02F 1/2257 (2013.01); G02F 1/212 (2021.01); H01L 29/66181 (2013.01); H01L 29/94 (2013.01); G02F 2201/063 (2013.01);
Abstract

A monolithic integrated electro-optical phase modulator, a Mach-Zehnder modulator including one or more of the phase modulators, and method for fabricating the phase modulator by III-V-on-silicon semiconductor processing are provided. The phase modulator includes a silicon-based n-type substrate base layer, and a III-V n-type ridge waveguide for propagating light, wherein the ridge waveguide protrudes from and extends along the n-type substrate base layer. Further, the phase modulator includes one or more insulating layers provided on the ridge waveguide, wherein the one or more insulating layers have together a thickness of 1-100 nm, and a silicon-based p-type top cover layer provided on the one or more insulating layers at least above the ridge waveguide.


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