The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2023

Filed:

Feb. 01, 2019
Applicant:

Agc Inc., Chiyoda-ku, JP;

Inventors:

Shuhei Nomura, Tokyo, JP;

Kazutaka Ono, Tokyo, JP;

Assignee:

AGC INC., Chiyoda-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C03C 3/091 (2006.01); C03C 4/20 (2006.01); H01L 21/02 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); G02F 1/1333 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
C03C 3/091 (2013.01); C03C 4/20 (2013.01); G02F 1/1333 (2013.01); H01L 21/02 (2013.01); H01L 21/76251 (2013.01); H01L 21/76254 (2013.01); H01L 21/76256 (2013.01); H01L 27/12 (2013.01); H01L 27/1218 (2013.01); H01L 27/1222 (2013.01); H01L 27/1262 (2013.01); H01L 29/786 (2013.01); H01L 29/78654 (2013.01); C03C 2204/00 (2013.01); H01L 29/66772 (2013.01);
Abstract

A glass substrate has a compaction of 0.1 to 100 ppm. An absolute value |Δα| of a difference between an average coefficient of thermal expansion αof the glass substrate and an average coefficient of thermal expansion of single-crystal silicon at 50° C. to 100° C., an absolute value |Δα| of a difference between an average coefficient of thermal expansion αof the glass substrate and an average coefficient of thermal expansion of the single-crystal silicon at 100° C. to 200° C., and an absolute value |Δα| of a difference between an average coefficient of thermal expansion αof the glass substrate and an average coefficient of thermal expansion of the single-crystal silicon at 200° C. to 300° C. are 0.16 ppm/° C. or less.


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