The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2023

Filed:

Apr. 28, 2020
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Saurav Bandyopadhyay, Dallas, TX (US);

Thomas Matthew LaBella, Raleigh, NC (US);

Huy Le Nhat Nguyen, Raleigh, NC (US);

Michael G. Amaro, Naperville, IL (US);

Robert Allan Neidorff, Bedford, NH (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H02M 3/158 (2006.01); G06F 1/26 (2006.01); H03K 17/082 (2006.01); H02M 1/00 (2006.01);
U.S. Cl.
CPC ...
H02M 3/158 (2013.01); G06F 1/266 (2013.01); H03K 17/0822 (2013.01); H02M 1/0009 (2021.05);
Abstract

A switch-mode power supply circuit includes a low-side switching transistor, a high-side switching transistor, a low-side current sensing circuit, and a gate driver circuit. The low-side current sensing circuit is coupled to the low-side switching transistor and is configured to sense a current flowing through the low-side switching transistor. The gate driver circuit is coupled to the low-side current sensing circuit and the high-side switching transistor. The gate driver circuit is configured to generate a signal having a first drive strength to switch the high-side switching transistor based on current flowing through the low-side switching transistor being less than a threshold current, and to generate a signal having a second drive strength to switch the high-side switching transistor based on current flowing through the low-side switching transistor being greater than the threshold current. The first drive strength is greater than the second drive strength.


Find Patent Forward Citations

Loading…