The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2023

Filed:

May. 28, 2018
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Takeshi Yamatoya, Tokyo, JP;

Takashi Nagira, Tokyo, JP;

Shinya Okuda, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/227 (2006.01); H01S 5/026 (2006.01); H01S 5/22 (2006.01);
U.S. Cl.
CPC ...
H01S 5/227 (2013.01); H01S 5/0265 (2013.01); H01S 5/2206 (2013.01);
Abstract

A semiconductor laser device includes a laser section and a modulator section. The laser section has: a first mesa stripe which is formed on a semiconductor substrate; semi-insulative burying layers which are placed to abut on both side surfaces of the first mesa stripe and are formed on the semiconductor substrate; n-type burying layers formed on respective surfaces of the semi-insulative burying layers; and a p-type cladding layer which covers surfaces of the n-type burying layers and the first mesa stripe. The modulator section has: a second mesa stripe which is formed on the semiconductor substrate; semi-insulative burying layers which are placed to abut on both side surfaces of the second mesa stripe and are formed on the semiconductor substrate; and a p-type cladding layer which covers surfaces of the semi-insulative burying layers and the second mesa stripe.


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