The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2023

Filed:

Jul. 29, 2020
Applicant:

Korea Advanced Institute of Science and Technology, Daejeon, KR;

Inventors:

Sung-Yool Choi, Daejeon, KR;

Byung Chul Jang, Daejeon, KR;

Jun Hwe Cha, Daejoen, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/10 (2006.01); H01L 27/28 (2006.01); H01L 51/00 (2006.01); G06N 3/063 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
H01L 51/105 (2013.01); G06N 3/063 (2013.01); H01L 27/285 (2013.01); H01L 51/0097 (2013.01); H01L 51/0591 (2013.01); H01L 51/004 (2013.01); H01L 51/0094 (2013.01); H01L 2251/301 (2013.01);
Abstract

The present disclosure provides a soft memristor for soft neuromorphic system including a substrate, a first electrode layer formed on the substrate, a metal diffusion barrier layer formed on the first electrode layer, a resistive switching material layer formed on the metal diffusion barrier layer, and a second electrode layer formed on the resistive switching material layer.


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