The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2023

Filed:

May. 13, 2019
Applicant:

Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd., Shenzhen, CN;

Inventors:

Hualong Liu, Shenzhen, CN;

Tsungyuan Wu, Shenzhen, CN;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 51/52 (2006.01); H01L 51/00 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0005 (2013.01); H01L 27/3246 (2013.01); H01L 51/52 (2013.01);
Abstract

An organic light emitting device and a method of manufacturing the same are provided. The organic light emitting device, from bottom to top, includes a substrate, an indium tin oxide layer, a semiconductor layer, and a pixel defining layer. The semiconductor layer covers foreign particles on the indium tin oxide layer to make the indium tin oxide layer have an even thickness. The method of manufacturing the organic light emitting device including steps of providing an indium tin oxide layer, providing a semiconductor layer, patterning, and providing a pixel defining layer. The disclosure prevents from uneven brightness (mura) causing from a bright spot or a dark spot appearing at the foreign particles and ensures an overall even brightness of the organic light emitting device by providing the semiconductor layer disposed on the indium tin oxide layer to cover foreign particles on the indium tin oxide layer.


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