The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2023

Filed:

Nov. 11, 2019
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventor:

Meng-Yang Chen, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 33/30 (2010.01); H01L 33/50 (2010.01); H01L 33/36 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 33/30 (2013.01); H01L 33/36 (2013.01); H01L 33/50 (2013.01);
Abstract

A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure and a light-emitting structure. The light-emitting structure is located between the first semiconductor structure and the second semiconductor structure. The light-emitting structure includes a multiple quantum well structure. The multiple quantum well structure contains aluminum and includes a plurality of semiconductor stacks. Each of the semiconductor stacks is stacked by a well layer and a barrier layer. In each semiconductor stack, the well layer has a thickness larger than a thickness of the barrier layer.


Find Patent Forward Citations

Chen, Meng-Yang. (2023). Semiconductor device (U.S. Patent No. 11552217). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11552217

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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