The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2023

Filed:

Jun. 15, 2021
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Gerd Schuppener, Allen, TX (US);

Miaad Aliroteh, Milpitas, CA (US);

Srinath Ramaswamy, Murphy, TX (US);

Baher Haroun, Allen, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H04B 10/69 (2013.01); H01L 31/02 (2006.01); H01L 31/107 (2006.01); H03F 3/08 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02027 (2013.01); H01L 31/107 (2013.01); H03F 3/08 (2013.01); H04B 10/6911 (2013.01); H04B 10/6931 (2013.01);
Abstract

An avalanche photo-diode (APD) circuit includes a first APD and a bias circuit. The first APD is configured to detect light. The bias circuit is configured to control a gain of the first APD. The bias circuit includes a second APD, a reference voltage source, a bias voltage generation circuit, and a metal layer configured to shield the second APD from the light. The reference voltage source is configured to bias the second APD. The bias voltage generation circuit is configured to generate a bias voltage for biasing the first APD based on dark current output by the second APD.


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