The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2023

Filed:

Sep. 21, 2020
Applicant:

Stmicroelectronics S.r.l., Agrate Brianza, IT;

Inventor:

Davide Giuseppe Patti, Mascalucia, IT;

Assignee:

STMicroelectronics S.r.l., Agrate Brianza, IT;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/66 (2006.01); H01L 29/04 (2006.01); H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 27/06 (2006.01); H01L 29/43 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7788 (2013.01); H01L 29/045 (2013.01); H01L 29/42316 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/7789 (2013.01); H01L 21/0254 (2013.01); H01L 21/02428 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 27/0605 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/432 (2013.01);
Abstract

Embodiments are directed to high electron mobility transistor (HEMT) devices and methods. One such HEMT device includes a substrate having a first surface, and first and second heterostructures on the substrate and facing each other. Each of the first and second heterostructures includes a first semiconductor layer on the first surface of the substrate, a second semiconductor layer on the first surface of the substrate, and a two-dimensional electrode gas (2DEG) layer between the first and second semiconductor layers. A doped semiconductor layer is disposed between the first and second heterostructures, and a source contact is disposed on the first heterostructure and the second heterostructure.


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