The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2023
Filed:
Jun. 05, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Hyunsu Kim, Suwon-si, KR;
Seonghun Park, Hwaseong-si, KR;
Sunjung Lee, Hwaseong-si, KR;
Hun Kim, Yongin-si, KR;
Namgil You, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Abstract
A semiconductor device includes a peripheral circuit region comprising a first substrate, circuit elements on the first substrate, a first insulating layer covering the circuit elements, and a contact plug passing through the first insulating layer and disposed to be connected to the first substrate; and a memory cell region comprising a second substrate, gate electrodes on the second substrate and stacked in a vertical direction, and channel structures passing through the gate electrodes, wherein the contact plug comprises a metal silicide layer disposed to contact the first substrate and having a first thickness, a first metal nitride layer on the metal silicide layer to contact the metal silicide layer and having a second thickness, greater than the first thickness, a second metal nitride layer on the first metal nitride layer, and a conductive layer on the second metal nitride layer.