The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2023
Filed:
Oct. 14, 2021
Applicant:
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Inventors:
Yung-Fong Lin, Taoyuan, TW;
Cheng-Tao Chou, Huwei Township, Yunlin County, TW;
Assignee:
Vanguard International Semiconductor Corporation, Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/20 (2006.01); H01L 29/778 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1075 (2013.01); H01L 29/2003 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01);
Abstract
A substrate structure and a method for fabricating a semiconductor structure including the substrate structure are provided. The substrate structure includes a substrate, a bow adjustment layer, and a silicon layer. The bow adjustment layer is on the top surface of the substrate. The silicon layer is on the bow adjustment layer. The substrate structure has a total bow value, and the total vow value is from −20 μm to −40 μm.