The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2023

Filed:

Apr. 01, 2020
Applicant:

Kioxia Corporation, Minato-ku, JP;

Inventor:

Takuya Konno, Yokkaichi, JP;

Assignee:

Kioxia Corporation, Minato-ku, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); G11C 13/00 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2463 (2013.01); G11C 13/0002 (2013.01); G11C 13/0007 (2013.01); H01L 45/085 (2013.01); H01L 45/1266 (2013.01); H01L 45/145 (2013.01); H01L 45/1608 (2013.01); H01L 45/1675 (2013.01); G11C 2213/51 (2013.01); G11C 2213/71 (2013.01);
Abstract

According to an embodiment, a semiconductor memory device comprises first wiring lines, second wiring lines, and first variable resistance elements. The first wiring lines are arranged in a first direction and have as their longitudinal direction a second direction intersecting the first direction. The second wiring lines are arranged in the second direction and have the first direction as their longitudinal direction. The first variable resistance elements are respectively provided at intersections of the first wiring lines and the second wiring lines. In addition, this semiconductor memory device comprises a first contact extending in a third direction that intersects the first direction and second direction and having one end thereof connected to the second wiring line. The other end and a surface intersecting the first direction of this first contact are covered by a first conductive layer.


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