The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2023
Filed:
Apr. 09, 2021
Mitsubishi Electric Corporation, Tokyo, JP;
Koichi Nishi, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
Provided is a semiconductor device in which the reliability of the gate insulating film in a trench gate is improved. The semiconductor device includes a semiconductor substrate, a plurality of trench gates, and a gate electrode. The semiconductor substrate includes an active region and a wiring region. The trench gates extend from the first active region to the wiring region. The trench gates form parts of transistors in the active region. The gate electrode is provided in the wiring region and is electrically connected to the trench gates. The end portions of the trench gates are located in the wiring region. The gate electrode is provided so as to cover gate contact portions formed at the end portions of the trench gates. The gate electrode is electrically connected to trench gates via the gate contact portions. The plurality of trench gates extend only in one direction.