The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2023

Filed:

Apr. 01, 2021
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Steven Alfred Kummerl, Carrollton, TX (US);

Benjamin Stassen Cook, Dallas, TX (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/14 (2006.01); H01L 21/48 (2006.01); H01L 23/498 (2006.01); H01L 21/78 (2006.01);
U.S. Cl.
CPC ...
H01L 23/145 (2013.01); H01L 21/4853 (2013.01); H01L 21/78 (2013.01); H01L 23/4985 (2013.01); H01L 23/49838 (2013.01);
Abstract

A method for forming a semiconductor structure includes curing a shape memory polymer in a first shape. The shape memory polymer is coupled to a conductive layer. The method further includes folding the shape memory polymer from the first shape into a second shape. The method also includes bonding a semiconductor wafer to the conductive layer while the shape memory polymer is in the second shape. The semiconductor wafer has first and second dies. The semiconductor wafer is then singulated to separate the first die from the second die. The method further includes expanding the shape memory polymer to its first shape and singulating the shape memory polymer to separate the first and second dies.


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