The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2023

Filed:

Jan. 18, 2021
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventor:

Takashi Yoshida, Fuchu, JP;

Assignee:

ASM IP Holding B.V., Versterkerstraat, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32449 (2013.01); H01J 37/32082 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01);
Abstract

A method including: a plasma contact step including supplying treatment gas including a reactant gas into a chamber, activating a reactant component included in the treatment gas by generating plasma from the reactant component by applying high-frequency power, and bringing the treatment gas including the reactant component activated into contact with the surface of the substrate, in which in the plasma contact step, a first plasma generation condition in which stable plasma is generated by applying high-frequency power of a first power level while supplying treatment gas of a first concentration is changed to a second plasma generation condition in which a desired thin film is obtained by performing at least one of increasing the high-frequency power to a second power level and gradually decreasing the treatment gas to a second concentration, and of gradually increasing the high-frequency power to the second power level, and abnormal electrical discharge is suppressed.


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