The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2023

Filed:

Apr. 30, 2021
Applicant:

SK Hynix Inc., Icheon-si, KR;

Inventors:

Seok Joon Kang, Seoul, KR;

Moo Hui Park, Icheon-si, KR;

Jun Ho Cheon, Seoul, KR;

Assignee:

SK hynix Inc., Icheon-si Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 13/0004 (2013.01); G11C 13/0026 (2013.01); G11C 13/0028 (2013.01); G11C 2013/0045 (2013.01);
Abstract

A nonvolatile memory apparatus performs a plurality of read operations by using a plurality of read voltages. A first read operation is performed by applying a first read voltage to a memory cell. A second read operation is selectively performed based on whether a snap-back of the memory cell occurs during the first read operation. The second read operation is performed by applying a second read voltage having a higher voltage level than the first read voltage to the memory cell.


Find Patent Forward Citations

Loading…