The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2023
Filed:
Oct. 26, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Suji Gim, Hwaseong-si, KR;
Sunwoo Yook, Seoul, KR;
Youngduk Ko, Nonsan-si, KR;
Youngseok Roh, Suwon-si, KR;
Seoyoung Maeng, Seoul, KR;
Jongyong Bae, Hwaseong-si, KR;
Jihnkoo Lee, Nonsan-si, KR;
Jungjoon Pyeon, Suwon-si, KR;
Jongha Hwang, Nonsan-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
PureSphere Co., Ltd., Nonsan-si, KR;
Abstract
An apparatus and method for treating a semiconductor process gas comprises a gas inlet allowing a treatment target gas (or gas to be treated) to flow therethrough; a catalytic reaction portion including a catalyst and configured to allow the treatment target gas to be brought into contact with the catalyst; a space velocity controller between the gas inlet and the catalytic reaction portion, the space velocity controller extending from the gas inlet in a diagonal direction in relation to the gas inlet; a differential pressure buffer portion between the space velocity controller and the catalytic reaction portion and including a filter; and a gas outlet configured to externally discharge a product formed as the treatment target gas comes into contact with the catalyst.