The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2023

Filed:

Mar. 13, 2019
Applicants:

National Research Council of Canada, Ottawa, CA;

Yuning LI, Kitchener, CA;

Jesse Quinn, Toronto, CA;

Inventors:

Jianping Lu, Ottawa, CA;

Afshin Dadvand, Montreal, CA;

Mark Bortolus, Hamilton, CA;

Salima Alem, Ottawa, CA;

Ye Tao, Ottawa, CA;

Yuning Li, Kitchener, CA;

Jesse Quinn, Toronto, CA;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/00 (2006.01); C07D 493/04 (2006.01); H01L 51/05 (2006.01); H01L 51/42 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0072 (2013.01); C07D 493/04 (2013.01); H01L 51/0073 (2013.01); H01L 51/0558 (2013.01); H01L 51/42 (2013.01);
Abstract

The development of air-stable unipolar n-type semiconductors with good solubility in organic solvents at room temperature remains a critical issue in the field of organic electronics. Moreover, most of the existing semiconducting materials exhibit LUMO energy levels higher than −4.0 eV, making electron transport sensitive to both moisture and oxygen. Bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide or derivatives thereof are disclosed herein. More specifically, bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide or derivatives thereof for use in organic electronics are disclosed. A process for the preparation of bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide and derivatives is also disclosed. The bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide or derivatives thereof are characterized by high electron mobilities and are suitable for use as n-type semiconductors in organic electronics.


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