The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2023
Filed:
Nov. 27, 2020
South China University of Technology, Guangzhou, CN;
Miao Xu, Guangzhou, CN;
Hua Xu, Guangzhou, CN;
Min Li, Guangzhou, CN;
Junbiao Peng, Guangzhou, CN;
Lei Wang, Guangzhou, CN;
Jian Hua Zou, Guangzhou, CN;
Hong Tao, Guangzhou, CN;
SOUTH CHINA UNIVERSITY OF TECHNOLOGY, Guangzhou, CN;
Abstract
The present invention discloses a metal oxide (MO) semiconductor, which is obtained by doping a small amount of rare-earth oxide (RO) as a photo-induced carrier transportion center into an indium-containing MO semiconductor to form a (InO)(MO)(RO)semiconductor material. According to the present invention, a charge transportion center can be formed by utilizing the characteristics that the radius of rare-earth ions is equal to that of indium ions, and 4f orbitals in the rare-earth ions and 5s orbitals of the indium ions, so as to improve the stability under illumination. The present invention further provides a thin-film transistor based on the MO semiconductor and application thereof.