The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2023

Filed:

Apr. 05, 2017
Applicant:

Sumitomo Electric Industries, Ltd., Osaka, JP;

Inventors:

Keiichiro Geshi, Osaka, JP;

Shigeru Nakayama, Osaka, JP;

Masashi Yoshimura, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B32B 15/04 (2006.01); H01L 21/02 (2006.01); C30B 33/06 (2006.01); C04B 37/00 (2006.01); C30B 29/40 (2006.01); H01L 21/762 (2006.01); C04B 35/117 (2006.01); C04B 35/185 (2006.01); B32B 18/00 (2006.01); C04B 37/02 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0242 (2013.01); B32B 18/00 (2013.01); C04B 35/117 (2013.01); C04B 35/185 (2013.01); C04B 37/00 (2013.01); C04B 37/003 (2013.01); C04B 37/005 (2013.01); C04B 37/023 (2013.01); C30B 29/40 (2013.01); C30B 33/06 (2013.01); H01L 21/02458 (2013.01); H01L 21/02461 (2013.01); H01L 21/02463 (2013.01); H01L 21/02488 (2013.01); H01L 21/7624 (2013.01); B32B 2457/00 (2013.01); C04B 2235/3217 (2013.01); C04B 2235/3463 (2013.01); C04B 2235/80 (2013.01); C04B 2235/96 (2013.01); C04B 2235/963 (2013.01); C04B 2235/9607 (2013.01); C04B 2237/062 (2013.01); C04B 2237/34 (2013.01); C04B 2237/341 (2013.01); C04B 2237/343 (2013.01); C04B 2237/346 (2013.01); C04B 2237/36 (2013.01); C04B 2237/365 (2013.01); C04B 2237/366 (2013.01); C04B 2237/368 (2013.01); C04B 2237/40 (2013.01); C04B 2237/52 (2013.01); C04B 2237/592 (2013.01);
Abstract

Provided is a polycrystalline ceramic substrate to be bonded to a compound semiconductor substrate with a bonding layer interposed therebetween, wherein at least one of relational expression (1) 0.7<α/α<0.9 and relational expression (2) 0.7<α/α<0.9 holds, where αrepresents a linear expansion coefficient of the polycrystalline ceramic substrate at 30° C. to 300° C. and αrepresents a linear expansion coefficient of the compound semiconductor substrate at 30° C. to 300° C., and αrepresents a linear expansion coefficient of the polycrystalline ceramic substrate at 30° C. to 1000° C. and αrepresents a linear expansion coefficient of the compound semiconductor substrate at 30° C. to 1000° C.


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