The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2023

Filed:

May. 03, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Yumin Kim, Seoul, KR;

Seyun Kim, Seoul, KR;

Jinhong Kim, Seoul, KR;

Soichiro Mizusaki, Suwon-si, KR;

Youngjin Cho, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/26 (2006.01); G11C 16/30 (2006.01); G11C 5/06 (2006.01); G11C 16/14 (2006.01); G11C 16/04 (2006.01); G11C 16/24 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 5/06 (2013.01); G11C 16/0433 (2013.01); G11C 16/14 (2013.01); G11C 16/24 (2013.01); G11C 16/30 (2013.01);
Abstract

A nonvolatile memory device and an operating method thereof are provided. The nonvolatile memory device includes a memory cell array including first to third memory cells sequentially arranged in a vertical stack structure and a control logic configured to apply a first non-selection voltage to the first memory cell, apply a second non-selection voltage different from the first non-selection voltage to the third memory cell, apply a selection voltage to the second memory cell, and select the second memory cell as a selection memory cell.


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