The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2023

Filed:

Jun. 29, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventor:

Masayuki Terai, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); H01L 27/24 (2006.01); H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0028 (2013.01); G11C 13/0004 (2013.01); G11C 13/0026 (2013.01); H01L 27/2427 (2013.01); H01L 27/2463 (2013.01); H01L 45/06 (2013.01); H01L 45/122 (2013.01); G11C 2213/72 (2013.01); H01L 45/141 (2013.01); H01L 45/1675 (2013.01);
Abstract

A resistive memory device includes a first word line extending in a first horizontal direction, a second word line extending on the first word line in the first horizontal direction, a third word line extending on the second word line in the first horizontal direction, a first bit line extending between the first and second word lines in a second horizontal direction, a second bit line extending between the second and third word lines in the second horizontal direction, and memory cells respectively arranged between the first word line and the first bit line, between the first bit line and the second word line, between the second word line and the second bit line, and between the second bit line and the third word line. A thickness of the second word line is greater than a thickness of each of the first word line and the third word line.


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