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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11543904 B1

PDFFull Text
Date of Patent:
Jan. 03, 2023

Filed:

Dec. 30, 2020

Display device

Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Seung Lyong Bok, Hwaseong-si, KR;

Jong In Baek, Hwaseong-si, KR;

Young Seok Seo, Seoul, KR;

Sun Mi Yu, Seoul, KR;

Jong Hyun Lee, Suwon-si, KR;

Jin Oh Kwag, Yongin-si, KR;

Assignee:

SAMSUNG DISPLAY CO., LTD., Yongin-si, KR;

Attorney:

Kile Park Reed & Houtteman PLLC

Primary Examiner:

Jennifer T Nguyen

Int. Cl.
CPC ...
G09G 5/00 (2006.01); G06F 3/041 (2006.01); G06F 3/044 (2006.01); G06F 3/046 (2006.01); H01L 31/12 (2006.01); H01L 27/12 (2006.01); H01L 31/105 (2006.01); H01L 27/32 (2006.01); H01L 51/52 (2006.01); G06V 40/13 (2022.01); G06F 3/045 (2006.01); H04R 1/02 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0412 (2013.01); G06F 3/046 (2013.01); G06F 3/0443 (2019.05); G06V 40/1306 (2022.01); H01L 27/1214 (2013.01); H01L 27/3234 (2013.01); H01L 27/3246 (2013.01); H01L 31/1055 (2013.01); H01L 31/12 (2013.01); H01L 51/5253 (2013.01); H01L 51/5271 (2013.01); H01L 51/5293 (2013.01); G06F 3/045 (2013.01); G06F 2203/04105 (2013.01); G06F 2203/04107 (2013.01); G06V 40/1318 (2022.01); H04R 1/025 (2013.01); H04R 2499/15 (2013.01);
Abstract

A display device includes a thin-film transistor layer disposed on a substrate and including thin-film transistors; and an emission material layer disposed on the thin-film transistor layer. The emission material layer includes light-emitting elements each including a first light-emitting electrode, an emissive layer and a second light-emitting electrode, light-receiving elements each including a first light-receiving electrode, a light-receiving semiconductor layer and a second light-receiving electrode, and a first bank disposed on the first light-emitting electrode and defining an emission area of each of the light-emitting elements. The light-receiving elements are disposed on the first bank.

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