The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2023
Filed:
Sep. 14, 2021
Applicant:
Anello Photonics, Inc., Santa Clara, CA (US);
Inventor:
Avi Feshali, Los Angeles, CA (US);
Assignee:
Anello Photonics, Inc., Santa Clara, CA (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 6/00 (2006.01); G02B 6/12 (2006.01); G02B 6/26 (2006.01); G02B 6/42 (2006.01); G02B 6/10 (2006.01); G02B 6/136 (2006.01); G03F 7/00 (2006.01); G03F 7/42 (2006.01);
U.S. Cl.
CPC ...
G02B 6/136 (2013.01); G03F 7/0005 (2013.01); G03F 7/423 (2013.01); G02B 2006/12138 (2013.01);
Abstract
Aspects of the present disclosure are directed to process flow to fabricate a waveguide structure with a silicon nitride core having atomic-level smooth sidewalls achieved by wet etching instead of the conventional dry etching process.
Feshali, Avi. (2023). Process flow with wet etching for smooth sidewalls in silicon nitride waveguides (U.S. Patent No. 11543589). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11543589
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile