The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2023

Filed:

Oct. 25, 2021
Applicant:

Poet Technologies, Inc., San Jose, CA (US);

Inventors:

William Ring, High Bridge, NJ (US);

Miroslaw Florjanczyk, Kanata, CA;

Suresh Venkatesan, Los Gatos, CA (US);

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/132 (2006.01); C23C 16/34 (2006.01); C23C 16/56 (2006.01); H01J 37/32 (2006.01); C23C 16/50 (2006.01);
U.S. Cl.
CPC ...
G02B 6/132 (2013.01); C23C 16/34 (2013.01); C23C 16/56 (2013.01); C23C 16/50 (2013.01); H01J 37/32091 (2013.01); H01J 2237/3321 (2013.01);
Abstract

A method for depositing silicon oxynitride film structures is provided that is used to form planar waveguides. These film structures are deposited on substrates and the combination of the substrate and the planar waveguide is used in the formation of optical interposers and subassemblies. The silicon oxynitride film structures are deposited using low thermal budget processes and hydrogen-free oxygen and hydrogen-free nitrogen precursors to produce planar waveguides that exhibit low losses for optical signals transmitted through the waveguide of 1 dB/cm or less. The silicon oxynitride film structures and substrate exhibit low stress levels of less than 20 MPa.


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