The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2023

Filed:

Jul. 25, 2019
Applicant:

Omnivision Technologies, Inc., Santa Clara, CA (US);

Inventors:

Woon II Choi, Sunnyvale, CA (US);

Sohei Manabe, San Jose, CA (US);

Assignee:

OmniVision Technologies, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01S 7/4865 (2020.01); H01L 27/146 (2006.01); H01L 27/148 (2006.01); G01S 17/89 (2020.01);
U.S. Cl.
CPC ...
G01S 7/4865 (2013.01); G01S 17/89 (2013.01); H01L 27/148 (2013.01); H01L 27/14614 (2013.01);
Abstract

A pixel circuit includes a photodiode in semiconductor material to accumulate image charge in response to incident light. A tri-gate charge transfer block coupled includes a single shared channel region the semiconductor material. A transfer gate, shutter gate, and switch gate are disposed proximate to the single shared channel region. The transfer gate transfers image charge accumulated in the photodiode to the single shared channel region in response to a transfer signal. The shutter gate transfers the image charge in the single shared channel region to a floating diffusion in the semiconductor material in response to a shutter signal. The switch gate is configured to couple the single shared channel region to a charge storage structure in the semiconductor material in response to a switch signal.


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