The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2023
Filed:
Aug. 22, 2019
Applicant:
Tohoku University, Miyagi, JP;
Inventors:
Atsushi Tsukazaki, Miyagi, JP;
Kohei Fujiwara, Miyagi, JP;
Assignee:
TOHOKU UNIVERSITY, Miyagi, JP;
Primary Examiner:
Int. Cl.
CPC ...
G01R 33/07 (2006.01); G01R 33/09 (2006.01); H01L 43/04 (2006.01); H01L 43/06 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01);
U.S. Cl.
CPC ...
G01R 33/07 (2013.01); G01R 33/093 (2013.01); H01L 43/04 (2013.01); H01L 43/065 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01);
Abstract
A Hall element that exhibits an anomalous Hall effect includes a substrate and a thin film as a magneto-sensitive layer on the substrate, the thin film having a composition of FeSn, where 0.5≤x<0.9. The thin film may be made of an alloy of Fe and Sn, and a dopant element. The dopant element may be a transition metal element that modulates spin-orbit coupling or magnetism. The dopant element may be a main-group element that has a different number of valence electrons from Sn and modulates carrier density. The dopant element may be a main-group element that modulates density of states.