The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2022

Filed:

Feb. 16, 2018
Applicant:

Novaled Gmbh, Dresden, DE;

Inventors:

Ulrich Heggemann, Dresden, DE;

Markus Hummert, Dresden, DE;

Assignee:

Novaled GmbH, Dresden, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 51/50 (2006.01); C07F 3/02 (2006.01); C07F 3/06 (2006.01); H01L 27/32 (2006.01); H01L 51/00 (2006.01); H01L 51/56 (2006.01); C07F 5/02 (2006.01); C09K 11/06 (2006.01); H01L 51/42 (2006.01);
U.S. Cl.
CPC ...
H01L 51/506 (2013.01); C07F 3/02 (2013.01); C07F 3/06 (2013.01); C07F 5/022 (2013.01); C09K 11/06 (2013.01); H01L 27/3211 (2013.01); H01L 51/002 (2013.01); H01L 51/005 (2013.01); H01L 51/006 (2013.01); H01L 51/008 (2013.01); H01L 51/0054 (2013.01); H01L 51/0061 (2013.01); H01L 51/0071 (2013.01); H01L 51/0072 (2013.01); H01L 51/0077 (2013.01); H01L 51/0084 (2013.01); H01L 51/0092 (2013.01); H01L 51/5092 (2013.01); H01L 51/56 (2013.01); C09K 2211/1018 (2013.01); H01L 51/001 (2013.01); H01L 51/0052 (2013.01); H01L 51/4253 (2013.01); H01L 51/5012 (2013.01); H01L 51/5072 (2013.01); H01L 51/5076 (2013.01); H01L 51/5088 (2013.01); H01L 51/5096 (2013.01); H01L 2251/308 (2013.01);
Abstract

The present invention relates to an electronic device comprising between a first electrode and a second electrode at least one first semiconducting layer comprising: (i) at least one first hole transport matrix compound consisting of covalently bound atoms and (ii) at least one electrical p-dopant selected from metal borate complexes, wherein the metal borate complex consists of at least one metal cation and at least one anionic ligand consisting of at least six covalently bound atoms which comprises at least one boron atom, wherein the first semiconducting layer is a hole injection layer, a hole-injecting part of a charge generating layer or a hole transport layer, a method for preparing the same and a respective metal borate compound.


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