The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2022

Filed:

Oct. 16, 2018
Applicant:

Osram Oled Gmbh, Regensburg, DE;

Inventors:

David O'Brien, Portland, OR (US);

Desiree Queren, Neutraubling, DE;

David Racz, Regensburg, DE;

Britta Goeoetz, Regensburg, DE;

Michael Schumann, Neu-Ulm, DE;

Assignee:

OSRAM OLED GmbH, Regensburg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/50 (2010.01); H01L 27/15 (2006.01); H01L 33/38 (2010.01); H01L 33/46 (2010.01);
U.S. Cl.
CPC ...
H01L 33/504 (2013.01); H01L 27/156 (2013.01); H01L 33/382 (2013.01); H01L 33/46 (2013.01); H01L 33/505 (2013.01); H01L 33/507 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0041 (2013.01); H01L 2933/0091 (2013.01);
Abstract

An optoelectronic semiconductor chip may include an active region configured to emit electromagnetic radiation during operation of said optoelectronic semiconductor chip. The optoelectronic semiconductor chip comprises conversion elements arranged to convert the wavelength of the electromagnetic radiation emitted by the active region during operation, and at least one barrier at least partially impermeable to the electromagnetic radiation emitted by the active region. The barrier is disposed in a lateral direction between the conversion elements, the lateral direction being parallel to the main extension plane of the semiconductor body, and the barrier extending transversely to the lateral direction. The active region has at least two emission regions which can be driven separately from each other, and each of the conversion elements is disposed in a radiation direction of the electromagnetic radiation emitted from one of the emission regions. A method for manufacturing an optoelectronic semiconductor chip is also disclosed.


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