IDiyas

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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11538963 B1

PDFFull Text
Date of Patent:
Dec. 27, 2022

Filed:

Feb. 20, 2019

Iii-v light emitting device having low si—h bonding dielectric layers for improved p-side contact performance

Applicant:

Ostendo Technologies, Inc., Carlsbad, CA (US);

Inventors:

Kameshwar Yadavalli, Carlsbad, CA (US);

JeongHyuk Park, Oceanside, CA (US);

Gregory Batinica, San Diego, CA (US);

Andrew Teren, Carlsbad, CA (US);

Clarence Crouch, Peoria, AZ (US);

Qian Fan, Carlsbad, CA (US);

Hussein S. El-Ghoroury, Carlsbad, CA (US);

Assignee:

Ostendo Technologies, Inc., Carlsbad, CA (US);

Attorneys:

Greg Caldwell, Esq.

W. Eric Boyd, Esq.

Primary Examiner:

S M Sohel Imtiaz

Int. Cl.
CPC ...
H01L 33/44 (2010.01); H01L 33/00 (2010.01); H01L 33/08 (2010.01); H01L 33/42 (2010.01); H01L 33/32 (2010.01); H01L 33/56 (2010.01); H01L 33/52 (2010.01); H01L 33/54 (2010.01);
U.S. Cl.
CPC ...
H01L 33/44 (2013.01); H01L 33/0025 (2013.01); H01L 33/0062 (2013.01); H01L 33/08 (2013.01); H01L 33/32 (2013.01); H01L 33/42 (2013.01); H01L 33/52 (2013.01); H01L 33/54 (2013.01); H01L 33/56 (2013.01); H01L 2933/0025 (2013.01);
Abstract

A multilayer light emitting device having a plurality of low Si—H bonding dielectric layers is disclosed for improved p-GaN contact performance. Improved p-side contact resistance is provided using one or more bonding, via or passivation layers in a multilayer light emitting structure by the use of processes and dielectric materials and precursors that provide dielectric layers with a hydrogen content of less than 13 at. %.

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