The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2022
Filed:
Nov. 12, 2020
Xiamen San'an Optoelectronics Co., Ltd., Xiamen, CN;
Wen-Yu Lin, Xiamen, CN;
Meng-Hsin Yeh, Xiamen, CN;
Yun-Ming Lo, Xiamen, CN;
Chien-Yao Tseng, Xiamen, CN;
Chung-Ying Chang, Xiamen, CN;
XIAMEN SAN'AN OPTOELECTRONICS CO., LTD, Fujian, CN;
Abstract
An epitaxial light emitting structure includes n-type and p-type semiconductor layers, and a light emitting component disposed therebetween. The light emitting component includes a multiple quantum well structure which contains a plurality of first periodic layered elements, each of which includes first, second and third layers alternately stacked on one another. For each of the first periodic layered elements, the first, second and third layers respectively have a first energy bandgap (Eg), a second energy bandgap (Eg), and a third energy bandgap (Eg) that satisfy a relationship of Eg<Eg<Eg. Also disclosed herein is a light emitting diode which includes the aforementioned epitaxial light emitting structure.