The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2022

Filed:

Mar. 25, 2020
Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Takenori Watabe, Annaka, JP;

Hiroshi Hashigami, Annaka, JP;

Hiroyuki Ohtsuka, Karuizawa-machi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/18 (2006.01); H01L 31/05 (2014.01); H01L 31/0224 (2006.01); H01L 31/0216 (2014.01); H01L 31/068 (2012.01);
U.S. Cl.
CPC ...
H01L 31/1864 (2013.01); H01L 31/02167 (2013.01); H01L 31/022425 (2013.01); H01L 31/0504 (2013.01); H01L 31/068 (2013.01); H01L 31/1804 (2013.01); Y02E 10/50 (2013.01); Y02P 70/50 (2015.11);
Abstract

The present invention provides a method for manufacturing a solar cell including: preparing a semiconductor silicon substrate which has an electrode, which is formed by baking an electrode precursor containing Ag powder on at least one main surface, has a PN junction, and is less than 100° C.; and performing an annealing treatment to the semiconductor silicon substrate at 100° C. or more and 450° C. or less. Consequently, there is provided the method for manufacturing a solar cell which suppresses a degradation phenomenon that an output of the solar cell is lowered when the solar cell is left as it stands at a room temperature in the atmosphere.


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