The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2022

Filed:

Apr. 24, 2020
Applicant:

University of South Carolina, Columbia, SC (US);

Inventors:

Mathew Kelley, Columbia, SC (US);

Andrew B. Greytak, Columbia, SC (US);

Mvs Chandrashekhar, Lexington, SC (US);

Joshua Letton, Columbia, SC (US);

Assignee:

University of South Carolina, Columbia, SC (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 31/0224 (2006.01); H01L 31/108 (2006.01); H01L 31/0336 (2006.01); H01L 31/18 (2006.01); H01L 31/032 (2006.01); H01L 31/07 (2012.01); H01L 31/0304 (2006.01); H01L 31/0312 (2006.01); H01L 51/42 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035218 (2013.01); H01L 31/022408 (2013.01); H01L 31/0312 (2013.01); H01L 31/0324 (2013.01); H01L 31/0336 (2013.01); H01L 31/03048 (2013.01); H01L 31/07 (2013.01); H01L 31/108 (2013.01); H01L 31/18 (2013.01); H01L 31/1848 (2013.01); H01L 51/42 (2013.01);
Abstract

The present disclosure is directed to photovoltaic junctions and methods for producing the same. Embodiments of the disclosure may be incorporated in various devices for applications such as solar cells and light detectors and may demonstrate advantages compared to standard materials used for photovoltaic junctions such as silica. An example embodiment of the disclosure includes a photovoltaic junction, the junction including a light absorbing material, an electron acceptor for shuttling electrons, and a metallic contact. In general, embodiments of the disclosure as disclosed herein include photovoltaic junctions which provide absorption across one or more wavelengths in the range from about 200 nm to about 1000 nm, or from near IR (NIR) to ultra-violet (UV). Generally, these embodiments include a multi-layered light absorbing material that can be formed from quantum dots that are successively deposited on the surface of an electron acceptor (e.g., a semiconductor).


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