The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2022
Filed:
Mar. 01, 2021
Rohm Co., Ltd., Kyoto, JP;
Yusuke Shimizu, Kyoto, JP;
ROHM CO., LTD., Kyoto, JP;
Abstract
A semiconductor device includes: an n-type epitaxial layer having an element main surface; a p-type body region, an n-type source region, and n-type drain regions; and a gate electrode including a second opening and first openings formed in a portion separated from the second opening toward the drain regions, wherein the body region selectively has a second portion exposed to the first openings of the gate electrode, and wherein the semiconductor device further includes a p-type body contact region formed in the portion of the body region exposed to the first openings and having an impurity concentration higher than an impurity concentration of the body region.