The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2022

Filed:

Aug. 07, 2020
Applicant:

Semiconductor Components Industries, Llc, Phoenix, AZ (US);

Inventors:

Woochul Jeon, Phoenix, AZ (US);

Ali Salih, Mesa, AZ (US);

Llewellyn Vaughan-Edmunds, Campbell, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/778 (2006.01); H01L 29/417 (2006.01); H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 29/205 (2006.01); H01L 29/20 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/10 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7787 (2013.01); H01L 29/0843 (2013.01); H01L 29/41758 (2013.01); H01L 29/41766 (2013.01); H01L 29/66462 (2013.01); H01L 29/7783 (2013.01); H01L 29/872 (2013.01); H01L 29/0619 (2013.01); H01L 29/1066 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/402 (2013.01);
Abstract

A semiconductor device includes a carrier generation layer disposed on a channel layer, a source contact and a drain contact disposed on the carrier generation layer, and a gate contact disposed between the source contact and the drain contact. The semiconductor device further includes a number N of conductive stripes disposed directly on the carrier generation layer in an area between the drain contact and the gate contact, and a number M of conductive transverse stripes disposed directly on the carrier generation layer in the area between the drain contact and the gate contact. Each of the N conductive stripes extends from and is electrically coupled to the drain contact. Each of the M conductive transverse stripes is aligned non-parallel to the N conductive stripes and is not in direct physical contact with the N conductive stripes.


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