The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2022
Filed:
May. 15, 2017
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventor:
Hidetoshi Koyama, Tokyo, JP;
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/311 (2006.01); H01L 21/66 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66462 (2013.01); H01L 21/02271 (2013.01); H01L 21/28587 (2013.01); H01L 21/31111 (2013.01); H01L 22/20 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01);
Abstract
A source electrode (), a drain electrode () and a T-shaped gate electrode () are formed on a GaN-based semiconductor layer () to form a transistor. An insulating film () covering the T-shaped gate electrode () is formed. A property of the transistor is evaluated to obtain an evaluation result. A film type, a film thickness or a dielectric constant of the insulating film () is adjusted in accordance with the evaluation result to make a property of the transistor close to a target property.