logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11538912 B1

PDFFull Text
Date of Patent:
Dec. 27, 2022

Filed:

Sep. 03, 2021

Method of forming semiconductor structure

Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventors:

Sheng-Hwa Lee, Changhua County, TW;

Hsiu-Ming Chen, Taoyuan, TW;

Assignee:

NANYA TECHNOLOGY CORPORATION, New Taipei, TW;

Attorney:

CKC & Partners Co., LLC

Primary Examiner:

Joseph C Nicely

Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 21/762 (2006.01); H01L 29/423 (2006.01); H01L 21/8234 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41766 (2013.01); H01L 21/76224 (2013.01); H01L 21/823468 (2013.01); H01L 27/088 (2013.01); H01L 29/0653 (2013.01); H01L 29/41775 (2013.01); H01L 29/4232 (2013.01); H01L 29/42356 (2013.01); H01L 29/4991 (2013.01); H01L 29/515 (2013.01); H01L 29/6656 (2013.01); H01L 29/66636 (2013.01); H01L 29/78 (2013.01); H01L 21/7682 (2013.01); H01L 21/823481 (2013.01);
Abstract

A method of forming a semiconductor structure includes following steps. A first isolation is formed between a pair of active regions. A gate structure is formed on the first isolation structure. The active regions are etched to form recesses with curved top surfaces. The active regions are etched again to change each of the curved top surfaces to be a top surface and a sidewall substantially perpendicular to the top surface. A pair of contacts is formed respectively on the active regions, such that each of the contacts has a bottom surface and a sidewall substantially perpendicular to the bottom surface.

Find Patent Forward Citations

Loading…