The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2022
Filed:
Sep. 07, 2018
Sony Corporation, Tokyo, JP;
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Yu Kato, Kanagawa, JP;
Yuta Inaba, Kanagawa, JP;
Masato Kanno, Kanagawa, JP;
Hideaki Mogi, Kanagawa, JP;
Miki Kimijima, Kanagawa, JP;
Sae Miyaji, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Abstract
[Problem] Provided are a photoelectric conversion device and an imaging apparatus capable of improving quantum efficiency and a response speed. [Solving means] A first photoelectric conversion device according to one embodiment of the present disclosure includes a first electrode, a second electrode opposed to the first electrode, and a photoelectric conversion layer. The photoelectric conversion layer is provided between the first electrode and the second electrode and includes at least one type of one organic semiconductor material having crystallinity. Variation in a ratio between horizontally-oriented crystal and vertically-oriented crystal in the photoelectric conversion layer is three times or less between a case where film formation of the one organic semiconductor material is performed at a first temperature and a case where the film formation of the one organic semiconductor material is performed at a second temperature. The second temperature is higher than the first temperature.